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esmt/emp EMP6403 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2010 revision : 5.1 1/12 dual, high-psrr, low-noise, low-dropout, 300ma cmos linear regulator general description the EMP6403 series is a family of dual-channel cmos linear regulators featuring ultra-high power supply rejection ratio (psrr), low output voltage noise, low dropout voltage, low quiescent current and fast transient response. it guarantees delivery of 300ma output current per regulator, and supports preset output voltages ranging from 1.2v to 3.3v with 0.1v increment (except for 1.85v and 2.85v). the EMP6403 is well suited for portable battery-powered application which requires high efficiency, low noise and small board space. with 150mv low dropout voltage at 300ma output current, EMP6403 sustains high psrr at very low input voltage which is common in battery-powered application. the EMP6403 also features 120v rms low output voltage noise without the presence of a noise bypass capacitor, which fits the application where noise and board space are both concerned. each regulator in the EMP6403 can be turned off independently, further prolonging the battery life. internally build-in thermal protection and over-current protection provide additional safety for the end use. the EMP6403 is available in miniature 6-pin sot-23-6 packages. features ? miniature sot-23-6 packages ? 300ma guaranteed output current ? 72db typical psrr at 1khz (60db typical at 10khz) ? 120v rms output voltage noise (10hz to 100khz) ? 150mv typical dropout at 300ma ? 150a typical quiescent current ? less than 1 a typical shutdown mode ? auto-discharge during chip disable ? fast line and load transient response ? 30s typical turn-on time ? 2.5v to 5.5v input range ? stable with small ceramic output capacitors ? over temperature and over current protection ? 2% output voltage tolerance applications ? wireless handsets ? pcmcia cards ? dsp core power ? hand-held instruments ? battery-powered systems ? portable information appliances ? typical application diagram ? typical performance characteristics psrr (db) frequency (hz) psrr vs. frequency EMP6403
esmt/emp EMP6403 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2010 revision : 5.1 2/12 connection diagram order information sot-23-6 EMP6403-xxvc06grr xx output voltage vc06 sot-23-6 package grr rohs & halogen free rating: -40 to 85c package in tape & reel pin functions name sot-23-6 function en1 1 enable input of regulator 1. set regulator 1 into the disable mode by pulling the en1 pin low. to keep regulator 1 on during normal operation, connect the en1 pin to vin. the en1 pin must not exceed vin under all operating conditions. vin 2 supply voltage input . require a minimum input capacitor of close to 1f to ensure stability and sufficient decoupling from the ground pin. en2 3 enable input of regulator 2. set regulator 2 into the disable mode by pulling the en2 pin low. to keep regulator 2 on during normal operation, connect the en2 pin to vin. the en2 pin must not exceed vin under all operating conditions. out2 4 output voltage feedback of regulator 2 grnd 5 ground pin . out1 6 output voltage feedback of regulator 1
esmt/emp EMP6403 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2010 revision : 5.1 3/12 order, mark & packing information package no. of pin en1 en2 marking vout1 vout2 product id packing 3.0 3.0 EMP6403-00vc06grr 3k units tape & reel 1.8 3.0 EMP6403-01vc06grr 3k units tape & reel 1.8 2.8 EMP6403-02vc06grr 3k units tape & reel 2.5 3.3 EMP6403-03vc06grr 3k units tape & reel 2.8 3.3 EMP6403-04vc06grr 3k units tape & reel 1.8 3.3 EMP6403-05vc06grr 3k units tape & reel 2.85 2.85 EMP6403-06vc06grr 3k units tape & reel 1.5 2.8 EMP6403-07vc06grr 3k units tape & reel sot-23-6 6 y y 1.2 2.8 EMP6403-11vc06grr 3k units tape & reel sot-23-6 6 y y 3.0 3.0 EMP6403-00vc06grr 3k units tape & reel
esmt/emp EMP6403 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2010 revision : 5.1 4/12 absolute maximum ratings (notes 1, 2) vin, v out1 , v out2 , v en1 , v en2 -0.3v to 6.5v power dissipation (note 3) storage temperature range -65c to160c junction temperature (tj) 150c lead temperature (10 sec.) 260c esd rating hbm (note 5) 2kv mm 200v thermal resistance ( ja ) 6-pin sot-23-6 250c/w 6-pin fbp-6 (note 3) operating ratings (note 1, 2) temperature range -40c to 85c supply voltage 2.5v to 5.5v electrical characteristics unless otherwise specified, all limits guaranteed for v in = v out +1v (note 6), v en1 = v en2 = vin, c in = c out = 2.2f, t j = 25c. boldface limits apply for the operating temperature extremes: -40c and 85c. symbol parameter conditions min typ (note 7) max units v in input voltage 2.5 5.5 v -2 +2 v otl output voltage tolerance i out = 30ma v in = v out (nom) +1v, (note 6) -3 +3 % of v out (nom) i out maximum output current average dc current rating 300 ma i limit output current limit 600 ma i out1 = i out2 = 0ma 150 supply current i out1 = i out2 = 300ma 250 i q shutdown supply current en1 = en2 = gnd 0.001 a i out = 30ma 15 i out = 100ma 50 v do dropout voltage (note 4), (note 6) i out = 300ma 150 mv f = 1khz 72 f = 10khz 60 power-supply rejection ratio vin=4.0v, v out =3.0v i out =150ma f = 100khz 43 f = 1khz 70 f = 10khz 57 psrr power-supply rejection ratio vin=3.3v, v out =3.0v i out =30ma f = 100khz 42 db line regulation i out = 30ma, (v out + 1v) v in 5.5v, (note 6) -0.1 0.01 0.1 %/v 1ma i out 100ma 6 v out load regulation 1ma i out 300ma 20 mv e n output voltage noise v out =2.8v, i out = 30ma, 10hz f 100khz (note 8) 120 v rms v ih , (v out + 0.5v) v in 5.5v (note 6) 1.2 v en enable input threshold v il , (v out + 0.5v) v in 5.5v (note 6) 0.4 v
esmt/emp EMP6403 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2010 revision : 5.1 5/12 thermal shutdown temperature 170 t sd thermal shutdown hysteresis 30 t on turn-on time v out at 95% of final value 30 s t off turn-off time i out =0ma (note 9) 2.4 ms note 1: absolute maximum ratings indicate limits beyond which damage may occur. electrical specifications are not applicable when the device is operated outside of its rated operating conditions. note 2: all voltages are defined and measured with respect to the potential at the ground pin. note 3: maximum power dissipation for the device is ca lculated using the following equations: ja a t - j(max) t d p = where t j(max) is the maximum junction temperature, t a is the ambient temperature, and ja is the junction-to-ambient thermal resistance. e.g. for the sot-23-6 package ja = 250c/w, t j(max) = 150c and using t a = 25c, the maximum power dissipation is found to be 500mw. the derating factor (-1/ ja ) = -4mw/c, thus below 25c the power dissipation figure can be increased by 4mw per degree, a nd similarity decreased by this factor for temperatures above 25c. the value of the ja for the fbp-6 package is specifically dependent on the pcb trace area, trace material, and the number of layers and thermal vias. note 4: dropout voltage is measured by reducing v in until v out drops 100mv from its nominal value at v in -v out =1v. dropout voltage does not apply to the regulator versions with v out less than 2.5v. note 5: human body model: 1.5k in series with 100pf. note 6: condition does not apply to input voltages below 2.5v since this is the minimum input operating voltage. note 7: typical values represent the most likely parametric norm. note 8: for different output voltage, the noise can be appr oximately calculated using the following formula: note 9: turn-off time is time measured between the enable input just decreasing below v il and the output voltage just decreasing to 10% of its nominal value. ) ( 42 rms out v v noise =
esmt/emp EMP6403 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2010 revision : 5.1 6/12 functional block diagram
esmt/emp EMP6403 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2010 revision : 5.1 7/12 typical performance characteristics unless otherwise specified, vin = v out (nom) + 1v, c in = c out = 2.2f, t a = 25c, v en1 = v en2 = vin. psrr (db) psrr (db) psrr vs. frequency frequency (hz) psrr vs. frequency frequency (hz) psrr (db) psrr vs. frequency psrr (db) psrr vs. frequency frequency (hz) frequency (hz) psrr (db) psrr vs. frequency frequency (hz) psrr (db) psrr vs. frequency frequency (hz)
esmt/emp EMP6403 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2010 revision : 5.1 8/12 typical performance characteristics unless otherwise specified, vin = v out (nom) + 1v, c in = c out = 2.2f, t a = 25c, v en1 = v en2 = vin. (continued) ground current ( a) v out deviation (%) ground current vs. vin vin (v) line regulation vin (v) temperature stability ambient temperature ( o c) output voltage (v) dropout voltage vs. load current ( f o r diff e r e nt t e m pe r a t u r e) load current (ma) dropout voltage (mv) v out =2.8v, i out =100ma v out (10mv/div) vin (v), tr=tf=10 s 40 s/div line transient 4.8 3.8 load transient v in =3.8v, i out1 =10ma~120ma v out1 (50mv/div) v out2 (10mv/div) i out1 (50ma/div) 40 s/div
esmt/emp EMP6403 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2010 revision : 5.1 9/12 typical performance characteristics unless otherwise specified, vin = v out (nom) + 1v, c in = c out = 2.2f, t a = 25c, v en1 = v en2 = vin. (continued) 20 s/div v en (1v/div) v out (2v/div) enable response vin=3.8v, i out =0ma 2ms/div v en (1v/div) v out (2v/div) disable response vin=3.8v, i out =0ma 20 s/div v en (1v/div) v out (2v/div) enable response vin=3.8v, i out =50ma 200 s/div v en (1v/div) v out (2v/div) disable response vin=3.8v, i out =50ma
esmt/emp EMP6403 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2010 revision : 5.1 10/12 physical dimensions sot-23-6 o 2 symbpls min. nom. max. a 1.45 a1 0.15 a2 0.90 1.15 1.30 b 0.30 0.50 c 0.08 0.22 d 2.90 bsc. e 2.80 bsc. e1 1.60 bsc. e 0.95 bsc e1 1.90 bsc l 0.30 0.45 0.60 l1 0.60 ref l2 0.25 ref 0 4 8 2 5 10 15 unit: mm
esmt/emp EMP6403 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2010 revision : 5.1 11/12 revision history revision date description 5.0 2009.03.24 emp transferred from version 4.2 5.1 2010.01.13 order informati on/grr definition (page 2)
esmt/emp EMP6403 elite semiconductor memory technology inc./ elite micropower inc. publication date : jan. 2010 revision : 5.1 12/12 important notice all rights reserved. no part of this document may be reproduced or duplicated in any form or by any means without th e prior permission of esmt. the contents contained in this document are believed to be accurate at the time of publicatio n. esmt assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. the information contained herein is presented only as a guide or examples for the application of ou r products. no responsibility is assumed by esmt for any infringeme nt of patents, copyrights, or other intellectual property rights of third parties which may result from its use. no license, either express , implied or otherwise, is granted under any patents, copyrig hts or other intellectual property rights of esmt or others. any semiconductor devices may have inherently a certain rate of failure. to minimize risks associ ated with customer's application, adequate design and operating s afeguards against injury, damage, or loss from such failure, should be provided by the customer when making application designs. esmt's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. if products described here are to be used for such kind s of application, purchaser must do its own quality assurance testing appropriate to such applications.

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